Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363954 | Applied Surface Science | 2008 | 5 Pages |
Abstract
Highly (0Â 0Â 2)-oriented AlN film was deposited on n-type (1Â 0Â 0)-oriented silicon substrates by the radio frequency magnetron sputtering method. An individual AlN cone with high aspect ratio was fabricated by the focused ion-beam (FIB) etching process in the surface of an as-formed AlN film. This etching method can easily control the tip radius and height to obtain AlN cones with different aspect ratios. The field-emission property of the individual AlN cone was measured in a scanning electron microscopy system equipped with a movable probe as the anode above the AlN tip. The results indicated that the as-formed single AlN cone with high aspect ratio possessed good field-emission ability although it only had a tiny emission area. Compared with a single Si tip fabricated by the same method, a single AlN cone exhibits better field-emission ability, and hence, has great potential as a promising candidate of point electron source for application in vacuum electronic devices.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Y.L. Li, C.Y. Shi, J.J. Li, C.Z. Gu,