Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363956 | Applied Surface Science | 2008 | 8 Pages |
Abstract
Etching and chemical mechanical polishing (CMP) experiments of the MgO single crystal substrate with an artificial scratch on its surface are respectively performed with the developed polishing slurry mainly containing 2Â vol.% phosphoric acid (H3PO4) and 10-20Â nm colloidal silica particles, through observing the variations of the scratch topography on the substrate surface in experiments process, the mechanism and effect of removing scratch during etching and polishing are studied, some evaluating indexes for effect of removing scratch are presented. Finally, chemical mechanical polishing experiments of the MgO substrates after lapped are conducted by using different kinds of polishing pads, and influences of the polishing pad hardness on removal of the scratches on the MgO substrate surface are discussed.
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Authors
R.K. Kang, K. Wang, J. Wang, D.M. Guo,