Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5364031 | Applied Surface Science | 2007 | 4 Pages |
Abstract
We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH3SiH3 and Dy(DPM)3 gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that â¼35 nm Dy-doped amorphous silicon oxycarbide (SiCxOy) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO2.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yoshifumi Ikoma, Takayoshi Masaki, Shinji Kawai, Teruaki Motooka,