Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5364067 | Applied Surface Science | 2009 | 4 Pages |
Abstract
Nd2Hf2O7 (NHO) thin films have been epitaxially grown by pulsed laser deposition (PLD) on Ge(1 1 1) substrates. In situ reflection high-energy electron diffraction (RHEED) evolution of the (1 1 1)-oriented NHO during the deposition has been investigated and shows that the epilayer has a twin-free character with type-B stacking. Interfacial structure of NHO/Ge has been examined by high-resolution transmission electron microscopy (HRTEM). The results indicate a highly crystalline film with a very thin interface, and the orientation relationship between NHO and Ge can be denoted as (1 1 1)NHO//(1 1 1)Ge and [1¯10]NHO//[11¯10]Ge. Finally, twin-free epitaxial growth of NHO with type-B orientation displays temperature dependence and the type-B epitaxy is favored at high temperature.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Feng Wei, Hailing Tu, Jun Du,