| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364135 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠A new kind of substrate (porous silicon) was used. ⺠Also this research introduces an easy and safe method to grow high quality GaN NWs. ⺠This is a new growth process to decrease the cost, complexity of growth of GaN NWs. ⺠It is a controllable method to synthesize GaN NWs by thermal evaporation.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
L. Shekari, A. Ramizy, K. Omar, H. Abu Hassan, Z. Hassan,