| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364181 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠We simulated the hydrogenated carbon film growth from CH radicals using classical molecular dynamics method. ⺠Effects of incident energy on the film structure were investigated. ⺠The contribution of adsorption, reactions, implantation and sputtering to film growth were analyzed. ⺠The optimized incident energy of CH is suggested in the range from 10 to 70 eV for gaining smooth film.
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Authors
W.L. Quan, X.W. Sun, Q. Song, Z.J. Fu, P. Guo, J.H. Tian, J.M. Chen,