| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364186 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠SiC rich layer has been produced by irradiating the C/Si interface by Ga+ ions. ⺠The amount of SiC produced depends on the square root of fluence of the projectile. ⺠TRIDYN code can describe the ion mixing process. ⺠The formation of SiC is explained by defect-mediated reaction.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Árpád Barna, Sandor Gurban, László Kotis, János Lábár, Attila Sulyok, Attila L. Tóth, Miklós Menyhárd, Janez Kovac, Peter Panjan,