Chemically deposited In2S3-Ag2S layers to obtain AgInS2 thin films by thermal annealing

AgInS2 thin films were obtained by the annealing of chemical bath deposited In2S3-Ag2S layers at 400 °C in N2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS2 has been obtained. These films have an optical band gap, Eg, of 1.86 eV and an electrical conductivity value of 1.2 × 10−3 (Ω cm)−1.

► We obtained polycrystalline silver indium sulfide thin films through the annealing of chemically deposited In2S3-Ag2S films. ► According to XRD chalcopyrite structure of AgInS2 was obtained. ► AgInS2 thin film has a band gap of 1.86 eV and a conductivity value of 1.2 × 10−3 (Ω cm)−1.