| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364205 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠High quality Al:ZnO films were deposited by rf magnetron sputtering technique. ⺠Metal-semiconductor transition was found in Al:ZnO film with big grain size. ⺠Both 2% and 4% Al-doped ZnO films are intrinsic metal in electrical transport properties. ⺠The tunneling effect dominates the temperature behavior of resistivity of Al:ZnO film with small grain size.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Xin Dian Liu, Jing Liu, Si Chen, Zhi Qing Li,