Effects of thermal treatment on the morphology of Alq3 thin layers on Si(1Â 1Â 1) substrate

Alq3 thin layers were vapor deposited onto a single crystal of Si(1 1 1) and the morphology of the surface was investigated by the scanning tunneling microscope under ultrahigh vacuum conditions. The STM imaging showed considerable influence of the thermal processing onto the topography of the sample. Slowly raising the sample temperature to ∼160 °C caused a complete desorption of Alq3 molecules and uncovering the clean surface of Si(1 1 1). A fast rise of the temperature (flashing) to ∼600 °C led to decomposition of the Alq3 and resulted in remnants of a carbon-rich surface species. Then heating or flashing this surface to a temperature in excess of 1000 °C brought about the occurrence of regular shape object on the Si(1 1 1) surface.