| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364283 | Applied Surface Science | 2007 | 19 Pages |
Abstract
Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Emil PinÄÃk, Hikaru Kobayashi, Rudolf Hajossy, Helena Glesková, Masao Takahashi, Matej Jergel, Róbert Brunner, Luc Ortega, Michal KuÄera, Martin Kráľ, Jaroslav Rusnák,