| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364511 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠Si films are prepared on SiC C-face by low-pressure chemical vapor deposition. ⺠Preferential growth orientation of ã1 1 1ã can be achieved in a temperature range. ⺠Si films grown on SiC C-face show a better crystal quality than that of Si-face. ⺠Si/SiC structures are analyzed by GULP. ⺠Each of Si/SiC C-face interface energy are calculated.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Xie Long-fei, Chen Zhi-ming, Li Lian-bi, Yang Chen, He Xiao-min, Ye Na,