| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364549 | Applied Surface Science | 2012 | 7 Pages |
Abstract
⺠The Cu(In,Ga)Se2 and Cu(In,Ga)2Se3.5 films follow different process to form CIGS phase. ⺠Composition loss of the annealed Cu(In,Ga)Se2 and Cu(In,Ga)2Se3.5 films are different. ⺠Hexagonal CuSe phase exhibits unique transport feature. ⺠Conductivity of the CIGS films is affected by the “variable range hopping” mechanism.
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Authors
Zhou Yu, Lian Liu, Yong Yan, Yanxia Zhang, Shasha Li, Chuanpeng Yan, Yong Zhang, Yong Zhao,