Effect of the nanoscratch resistance of indium nitride thin films in the etching duration

This study present the nanotribological behavior of single-crystalline indium nitride (InN) films onto aluminum nitride (AlN) buffer layers on Si(1 1 1) substrates. The surface morphology and friction (μ) were analyzed using atomic force microscopy and nanoscratch system. It is confirmed that the normal force (Fn) measured values of μ of the InN films, from 10 to 60 min of etching duration, were in the range from 0.2 to 0.43 for Fn = 2000 μN; 0.25 to 0.58 for Fn = 6000 μN, respectively. It is suggested that the measured values of μ is slightly increased based on the etching duration due to the etching effect on the grain boundary and reduce film quality of InN films. From morphological observations, we compared the sliding resistance against contact-induced damage of the InN films in the presented ploughed of the area. It is confirmed that the contact sliding line is observable due to the increased Fn, the following investigation with friction curve and lateral force is studied.

► We evaluated the tribological properties of InN films/AlN buffer/Si. ► The measured values of friction upon increasing the etching duration. ► Low In-N density of InN films at longer etching duration to decay resistance and plastic deformation.