Article ID Journal Published Year Pages File Type
5364778 Applied Surface Science 2010 4 Pages PDF
Abstract

The antireflection of porous-pyramids structured silicon surface has been studied. The porous surface is formed by stain etching in HF/Fe(NO3)3 aqueous solution after textured in KOH/IPA solution. Reflectivity measurements show an overall reflectance of 4.2% for porous-pyramids textured silicon surface in the range from 400 to 900 nm. An optimal etching time of 30 min is obtained when both reflectivity and photo-generated carriers lifetime are considered. This technique may be probably used in the texturization process for high-efficiency silicon solar cells.

Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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