| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364778 | Applied Surface Science | 2010 | 4 Pages |
Abstract
The antireflection of porous-pyramids structured silicon surface has been studied. The porous surface is formed by stain etching in HF/Fe(NO3)3 aqueous solution after textured in KOH/IPA solution. Reflectivity measurements show an overall reflectance of 4.2% for porous-pyramids textured silicon surface in the range from 400 to 900Â nm. An optimal etching time of 30Â min is obtained when both reflectivity and photo-generated carriers lifetime are considered. This technique may be probably used in the texturization process for high-efficiency silicon solar cells.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Junfeng Xiao, Lei Wang, Xiaoqiang Li, Xiaodong Pi, Deren Yang,