Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5364849 | Applied Surface Science | 2009 | 5 Pages |
Abstract
Sapphire substrates were nano-patterned by inductive coupled plasma etching process. Nonpolar a-plane GaN films were grown on planar and nano-patterned r-plane sapphire substrates by metal organic chemical vapor deposition. The anisotropic characteristic and the crystalline quality of the a-plane GaN films were studied through XRD rocking curves. The cross section and surface morphologies of the a-plane GaN films were studied using SEM and AFM measurements, respectively. The crystal quality and surface flatness of the nonpolar a-plane GaN were greatly improved through the usage of the nano-patterned r-plane sapphire substrates.
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Authors
Haiyong Gao, Fawang Yan, Yang Zhang, Jinmin Li, Yiping Zeng, Junxi Wang,