Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5364878 | Applied Surface Science | 2009 | 4 Pages |
This work demonstrates that by combining three methods with different mechanisms to enhance the photoluminescence (PL) intensity of Si nanocrystals embedded in SiO2 (or Si-nc:SiO2), a promising material for developing Si light sources, a very high PL intensity can be achieved. A 30-layered sample of Si-nc:SiO2/SiO2 was prepared by alternatively evaporating SiO and SiO2 onto a Si(1 0 0) substrate followed by thermal annealing at 1100 °C. This multilayered sample possessed a fairly high PL efficiency of 14% as measured by Greenham's method, which was 44 times that of a single-layered one for the same amount of excess Si content. Based on this multilayered sample, treatments of CeF3 doping and hydrogen passivation were subsequently applied, and a high PL intensity which was 167 times that of a single-layered one for the same amount of excess Si content was achieved.