| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364901 | Applied Surface Science | 2012 | 10 Pages |
Abstract
⺠Interfaces to p-type SiC and GaN are fundamental for the performances of power devices. ⺠Improvement of p-type implanted SiC morphology (capping layer) results into better Ti/Al ohmic contacts formed on it. ⺠Annealing of p-type implanted region can impact the 4H-SiC MOSFETs mobility, which is limited by interface traps scattering. ⺠Complex evolution of microstructure and Schottky barrier height in annealed Ni/Au contacts to p-GaN. ⺠The reduced Schottky barrier upon annealing in oxidizing atmosphere explains the lower specific contact resistance.
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Authors
F. Roccaforte, A. Frazzetto, G. Greco, F. Giannazzo, P. Fiorenza, R. Lo Nigro, M. Saggio, M. LeszczyÅski, P. Pristawko, V. Raineri,