Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5364905 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠The growth of thin zirconium oxides film on 6H-SiC(0 0 0 1) surface has been presented. ⺠Zirconium dioxide is one of the high-κ dielectric materials. ⺠The experiment was carried out using the methods: XPS, LEED, STM. ⺠The growth of ZrO2 films proceeded almost in layer-by-layer mode with some irregular islands.
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Authors
K. Idczak, P. Mazur, L. Markowski, M. SkiÅcim, M. MusiaÅ,