Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures

Article ID	Journal	Published Year	Pages	File Type
5364906	Applied Surface Science	2012	6 Pages	PDF

Abstract

âº We applied contactless surface photovoltage to assess oxide/SiC interface quality. âº 5Â nm-thick SiO2 film seems to be better interlayer between SiC and HfO2 than Al2O3. âº Element distribution in the oxide/SiC interface was obtained from AES profiling. âº SiO2 buffer and transition silicate nanofilms were found from AES spectra analysis.

Keywords

surface passivation Surface photovoltage Silicon carbide Interface charge AES, Auger electron spectroscopy

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

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Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures

Authors

A. Domanowska, M. Miczek, R. Ucka, M. Matys, B. Adamowicz, J. Å»ywicki, A. Taube, K. Korwin-Mikke, S. GieraÅtowska, M. Sochacki,