Article ID Journal Published Year Pages File Type
5364908 Applied Surface Science 2012 5 Pages PDF
Abstract
► Feasibility of application of double-gate dielectric stacks with ALD layers in NVSM was investigated. ► Significant improvement in retention at elevated temperatures was demonstrated. ► Superior memory window (extrapolated at 10 years) of flat-band voltage (Ufb) values were obtained. ► Analysis of conduction mechanisms under negative voltage revealed F-N tunneling. ► Extracted values of barrier height (ΦB) linearly decrease with increasing temperature.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices
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