Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5364959 | Applied Surface Science | 2008 | 5 Pages |
Abstract
Nitrogen-doped TiO2 thin films were prepared by pulsed laser deposition (PLD) by ablating metallic Ti target with pulses of 248Â nm wavelength in reactive atmospheres of O2/N2 gas mixtures. The layers were characterized by UV-VIS spectrophotometry and variable angle spectroscopic ellipsometry with complementary profilometry for measuring the thickness of the films. Band gap and extinction coefficient values are presented for films deposited at different substrate temperatures and for varied N2 content of the gas mixture. The shown tendencies are correlated to nitrogen incorporation into the TiO2-xNx layers. It is shown that layers of significantly increased visible extinction coefficient with band gap energy as low as 2.89Â eV can be obtained. A method is also presented how the spectroscopic ellipsometric data should be evaluated in order to result reliable band gap values.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
B. Farkas, J. Budai, I. Kabalci, P. Heszler, Zs. Geretovszky,