| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5364967 | Applied Surface Science | 2008 | 8 Pages |
Abstract
Phosphorous rich BP in thin film form was deposited onto fused silica substrates by co-evaporating boron (99.99%) and phosphorous (99.995%) from a tantalum boat and indirectly heated alumina crucible, respectively. Schottky diode structures for n-type BP (Al/n-BP/Sb) were fabricated out of these films. Corresponding current-voltage and capacitance-voltage characteristics of the Schottky diodes were recorded and analyzed in the light of the existing theories.
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Authors
S. Dalui, A.K. Pal,