Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5365015 | Applied Surface Science | 2007 | 5 Pages |
Abstract
Ge-doped Sb2Te3 films were prepared by magnetron sputtering of Ge and Sb2Te3 targets on SiO2/Si (1Â 0Â 0) substrates. The effect of Ge doping on the structure was studied in details by X-ray diffraction, differential scanning calorimetry, and X-ray photoelectron spectroscopy measurements. It is indicated that Ge atoms substitute for Sb/Te in lattice sites and form Ge-Te bonds, moreover, a metastable phase was observed in Ge-doped specimens. Both crystallization temperature and resistivity of amorphous Sb2Te3 increase after Ge doping, which are beneficial for improving room temperature stability of the amorphous state and reducing the SET current of chalcogenide random access memory.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jialin Yu, Bo Liu, Ting Zhang, Zhitang Song, Songlin Feng, Bomy Chen,