Deposition Ga-doped ZnO films on PEN substrate at room temperature for thin film silicon solar cells

Article ID	Journal	Published Year	Pages	File Type
5365217	Applied Surface Science	2012	4 Pages	PDF

Abstract

âº The stress of ZnO:Ga films prepared on PEN was smaller than that of samples on glass. âº The transmittance of sample on PEN was larger than that of samples on glass. âº The best electrical property of ZnO:Ga was obtained with DBSP at 14Â mm. âº The efficiency of flexible a-Si:H solar cells prepared at 150Â Â°C was 5.91%.

Keywords

Ga-doped zinc oxide Transparent conducting oxides PEN Solar cells Magnetron sputtering

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

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Deposition Ga-doped ZnO films on PEN substrate at room temperature for thin film silicon solar cells

Authors

Ke Tao, Yun Sun, Hongkun Cai, Dexian Zhang, Ke Xie, Yuan Wang,