Lithographically patterned silicon nanostructures on silicon substrates

The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 μm × 50 μm spaced by 20 μm) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO3 aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

► A simple technique to generate silicon patterned nanostructures by the combination of optical lithography and metal-assisted chemical etching was reported. ► A 20 nm-thick gold film was deposited onto silicon substrate on which the patterns were transferred using standard photolithography. ► It was demonstrated that for low resistive (0.01 Ω cm) silicon, nanowires of different heights are formed in Au-coated and uncoated areas after etching in 7 M HF/0.02 M AgNO3. ► For highly resistive silicon (5-10 Ω cm), nanowires are formed only in Au-uncoated regions.