Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5365339 | Applied Surface Science | 2008 | 4 Pages |
Abstract
Al2O3/SiO2 films have been deposited as UV antireflection coatings on 4H-SiC by electron-beam evaporation and characterized by reflection spectrum, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The reflectance of the Al2O3/SiO2 films is 0.33% and 10 times lower than that of a thermally grown SiO2 single layer at 276Â nm. The films are amorphous in microstructure and characterize good adhesion to 4H-SiC substrate. XPS results indicate an abrupt interface between evaporated SiO2 and 4H-SiC substrate free of Si-suboxides. These results make the possibility for 4H-SiC based high performance UV optoelectronic devices with Al2O3/SiO2 films as antireflection coatings.
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Authors
Feng Zhang, Huili Zhu, Weifeng Yang, Zhengyun Wu, Hongji Qi, Hongbo He, Zhengxiu Fan, Jianda Shao,