Electromagnetic energy absorption potential and microwave heating capacity of SiC thin films in the 1-16 GHz frequency range

We report on the electromagnetic (EM) absorption potential and microwave heating capacity of amorphous hydrogenated silicon carbide thin films (a-SiC:H) in the 1-16 GHz frequency domain. a-SiC:H thin films with typical thickness of 1 μm were deposited by plasma enhanced chemical vapor deposition on [1 0 0] undoped silicon substrates, and exhibit a deep EM absorption - up to 96% of the total EM energy irradiation - which is systematically converted into heat. Two-wavelength pyrometer tests show that temperatures exceeding 2000 K can be reached in a very short time, less than 100 s exposure to microwaves, showing a promising potential for specific microwave heating applications.

Graphical abstractEM absorption tests show that temperatures exceeding 2000 K can be reached in a very short time, less than 100 s exposure to microwaves, showing a promising potential for specific microwave heating applications.Download full-size imageHighlights► We have PECVD grown a-SiC:H thin films on un-doped Si substrates. ► Our SiC films show deep EM absorption - up to 96% of the total EM irradiation. ► These SiC films have a high efficiency in converting EM absorption to heat. ► Temperature exceeding 2000 K reached in less than 100 s exposure to EM were obtained. ► Higher-quality SiC films could be obtained after their microwave heating.