Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5365718 | Applied Surface Science | 2010 | 5 Pages |
Abstract
A series of ZnO1âxSx alloy films (0 â¤Â x â¤Â 1) were grown on quartz substrates by radio-frequency (rf) magnetron sputtering of ZnS ceramic target, using oxygen and argon as working gas. X-ray diffraction measurement shows that the ZnO1âxSx films have wurtzite structure with (0 0 2) preferential orientation in O-rich side (0 â¤Â x â¤Â 0.23) and zinc blende structure with (1 1 1) preferential orientation in S-rich side (0.77 â¤Â x â¤Â 1). However, when the S content is in the range of 0.23 < x < 0.77, the ZnO1âxSx film consists of two phases of wurtzite and zinc blende or amorphous ZnO1âxSx phase. The band gap energy of the films shows non-linear dependence on the S content, with an optical bowing parameter of about 2.9 eV. The photoluminescence (PL) measurement reveals that the PL spectrum of the wurtzite ZnO1âxSx is dominated by visible band and its PL intensity and intensity ratio of UV to visible band decrease greatly compared with undoped ZnO. All as-grown ZnO1âxSx films behave insulating, but show n-type conductivity for w-ZnO1âxSx and maintain insulating properties for β-ZnO1âxSx after annealed. Mechanisms of effects of S on optical and electrical properties of the ZnO1âxSx alloy are discussed in the present work.
Related Topics
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Physical and Theoretical Chemistry
Authors
H.L. Pan, T. Yang, B. Yao, R. Deng, R.Y. Sui, L.L. Gao, D.Z. Shen,