Optimization of laser patterning of textured gallium-doped zinc oxide for amorphous silicon photovoltaics

Laser scribing process of in-house textured gallium-doped zinc oxide (GZO) is optimized, aiming to improve the performance of amorphous silicon (a-Si:H) photovoltaic (PV) modules. The reasons for different scribing quality of textured GZO and SnO2:F scribed at 1064 nm with pulse duration of 40 ns were analyzed. Apart from separation resistance, quality of the scribed lines was evaluated by laser scan microscopy from three-dimensional images. Other types of lasers, such as laser with shorter pulse duration, laser at 355 nm and laser with Gaussian-to-tophat converter, were used to smooth the edges and flatten the bottoms of the scribed lines. The proper laser scribing realizes the advantages of textured GZO films used as front contacts in PV modules. A short-circuit current density of 14.3 mA/cm2 and an initial aperture area efficiency of 8.8% were obtained on 16 cm × 16 cm textured GZO coated glass scribed at 355 nm with pulse duration of 40 ns.