| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5365834 | Applied Surface Science | 2008 | 5 Pages |
Abstract
We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and the study of the effects of substrate temperature and laser fluences. Deposition rate of AlN thin film at 0.3Â Ã /pulse has been achieved with laser fluence of 1500Â mJ/cm2 and at substrate temperature of 250Â K, and this shows the enhancement of the deposition rate at low substrate temperature. Surface morphology of the deposited films is characterized by atomic force microscopy (AFM). In addition, the electrical performance of the MIS devices with AlN thin films prepared in this experiment has been characterized.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Ming Chang Shih, Chi Wei Liang, Ping Ju Chaing,