| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5365835 | Applied Surface Science | 2008 | 4 Pages |
Abstract
Influence of thin chalcogen X (S, Se, Te) interlayer between anode (indium-tin oxide, ITO) and a layer of N,Nâ²-bis(3-methylphenyl)-N,Nâ²-diphenylbenzidine (TPD) used as a hole-transport layer (HTL) on the operating characteristics of organic light-emitting diodes (OLEDs) of composition ITO/X/TPD/Alq3/Yb (Alq3 - aluminum 8-quinolinolate) has been investigated. It was found that the sulphur layer decreases operating voltage and enhances operating stability of a device while the selenium or tellurium interlayers impair these characteristics.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Marina A. Katkova, Vasilii A. Ilichev, Alexey N. Konev, Maxim A. Batenkin, Irina I. Pestova, Alexey G. Vitukhnovsky, Mikhail N. Bochkarev,