Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5365837 | Applied Surface Science | 2008 | 5 Pages |
Zr-Ti and Hf-Ti composite nitrates were successfully developed as single-source precursors for the chemical vapor deposition (CVD) of ZrxTi1âxO2 and HfxTi1âxO2 thin films. The Zr-Ti nitrate can be assumed as a solid solution of the individual Zr and Ti nitrates, and the Zr/Ti molar ratio in the deposited ZrxTi1âxO2 films is consistent with that in the precursor. The Hf-Ti nitrate appears to be a mixture of the Hf and Ti nitrates and the composition of the deposited HfxTi1âxO2 films depends remarkably on the heating time of precursor. Both ZrxTi1âxO2 and HfxTi1âxO2 films exhibit trade-off properties between band gap and dielectric constant. The obtained results suggest that ZrxTi1âxO2 and HfxTi1âxO2 films are promising candidates for gate dielectric application to improve the scalability and reduce the leakage current of the future complementary metal-oxide-semiconductor (CMOS) devices.