Au doped Sb3Te phase-change material for C-RAM device

Au doped Sb3Te phase-change films have been investigated by means of in situ temperature-dependent resistance measurement. Crystallization temperature of 2 at.% Au doped Sb3Te has been enhanced to 161 °C, which leads to a better data retention. The physical stability of the film has been improved evidently after adding Au as well. Resistance contrast has been improved to 1.1 × 104, one order of magnitude higher than that of pure Sb3Te. X-ray diffraction patterns indicate the polycrystalline Au-SbTe series have hexagonal structure, similar with pure Sb3Te alloy, when Au doping dose is less than 9 at.%.