Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366050 | Applied Surface Science | 2007 | 4 Pages |
Abstract
The effects of thermal annealing in Si base self-assembled Ge dots have been investigated by Raman spectra and PL spectra. An obvious Raman frequency shift under different annealing temperature can be observed. There are two main effects during the annealing procession: one is the inter-diffusion of the Si and Ge quantum dots; the other is the relaxation of the elastic strain. With the calculated results, PL blue shift can be related to strain relaxation effects, and/or a general decrease of Ge content due to the Ge-Si intermixing.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
QiJia Cai, Hao Zhou, Fang Lu,