| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5366154 | Applied Surface Science | 2008 | 4 Pages |
Abstract
MgxZn1âxO alloy films were prepared on sapphire substrates using Ar and N2 as the sputtering gases. The effect of the sputtering gas on the structural, optical and electrical properties of the MgxZn1âxO films was studied. By using N2 as the sputtering gas, the MgxZn1âxO film shows p-type conductivity and the band gap is larger than that employing Ar as the sputtering gas. The reason for this phenomenon is thought to be related to the reaction between N-O or N-Zn, and the N-doping.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Da-Yong Jiang, Ji-Ying Zhang, Ke-Wei Liu, Chong-Xin Shan, Yan-Min Zhao, Tong Yang, Bin Yao, You-Ming Lu, De-Zhen Shen,