Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366285 | Applied Surface Science | 2006 | 5 Pages |
Abstract
Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals is presented. The luminescence emission linewidth of Si nanocrystals is found to be less than thermal broadening at low temperature, confirming the atomic-like nature of their energetic states. Beside the main peak the low-temperature spectra reveal a â¼6Â meV replica, the origin of which is discussed. For some of the investigated dots, we also observe a â¼60Â meV transverse optical (TO) phonon replica. The regular arrangement of individual nanocrystals used in this work enables combined high-resolution transmission electron microscopy (TEM) and low-temperature photoluminescence characterization of the same single quantum dot.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
I. Sychugov, R. Juhasz, J. Valenta, M. Zhang, P. Pirouz, J. Linnros,