Article ID Journal Published Year Pages File Type
5366292 Applied Surface Science 2006 5 Pages PDF
Abstract

We report atomic scale flattening of surfaces of microstructures formed on Si wafers by furnace annealing. To avoid thermal deformation of the fabricated structures, advantage was taken of hydrogen annealing, which enables us to decrease the relaxation rate of Si surfaces due to surface hydrogenation. We examined cross-sectional shape and sidewall morphology of 3 μm deep trenches on Si(0 0 1) substrates after annealing at 1000 °C under various H2 pressures of 40-760 Torr. We successfully formed Si trenches with flat surfaces composed of terraces and steps while preserving the designed trench profile by increasing H2 pressure to 760 Torr.

Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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