Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366293 | Applied Surface Science | 2006 | 4 Pages |
Abstract
The atomic and electronic structures of the Si(0Â 0Â 1)-c(4Â ÃÂ 4) surface have been studied by scanning tunneling microscopy (STM) and density functional theory (DFT). To explain the experimental bias dependent STM observations, a modified mixed ad-dimer reconstruction model is introduced. The model involves three tilted Si dimers and a carbon atom incorporated into the third subsurface layer per c(4Â ÃÂ 4) unit cell. The calculated STM images show a close resemblance to the experimental ones.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jiangping He, G.V. Hansson, R.I.G. Uhrberg,