Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366296 | Applied Surface Science | 2006 | 4 Pages |
Abstract
The growth of thin K films on Si(1 1 1)-7 Ã 7 has been investigated by selecting the input and output polarizations of second-harmonic generation (SHG) at room temperature (RT) and at an elevated temperature of 350 °C. The SH intensity at 350 °C showed a monotonic increase with K coverages up to a saturated level, where low energy electron diffraction (LEED) showed a 3 Ã 1 reconstructed structure. The additional deposition onto the K-saturated surface at 350 °C showed only a marginal change in the SH intensity. These variations are different from the multi-component variations up to 1 ML and orders of magnitude increase due to excitation of plasmons in the multilayers at RT. The variations of SHG during desorption of K at 350 °C showed a two-step decay with a marked shoulder which most likely corresponds to the saturation K coverage of the Si(1 1 1)-3 Ã 1-K surface. The dominant tensor elements contributing to SHG are also identified for each surface.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Takanori Suzuki, Youichi Karaki, Dongmei Deng, Masatoshi Tanaka,