Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366298 | Applied Surface Science | 2006 | 4 Pages |
Abstract
Ultrathin Fe films have been epitaxially grown at room temperature on standard single crystal Ge(0Â 0Â 1) substrates and virtual Ge/Si(0Â 0Â 1) substrates. Their magnetic and electronic properties have been investigated in situ by spin polarized inverse photoemission and magneto-optical Kerr effect. In both cases, the onset of ferromagnetism appears definitively at 3Â ML, and the overall behavior is very similar in the case of standard and virtual substrates, so that the latter can be employed for growing high quality Fe/Ge/Si interfaces. All the films investigated display uniaxial anisotropy, which is explained in terms of the surface morphology induced by the preparation conditions.
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Authors
M. Cantoni, M. Riva, G. Isella, R. Bertacco, F. Ciccacci,