Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366299 | Applied Surface Science | 2006 | 4 Pages |
Abstract
Transiently excited electron states at the GaSb(0Â 0Â 1) surface have been studied by means of time- and angle-resolved photoemission spectroscopy based on a femtosecond laser system. A normally unpopulated surface electron state has been found at â¼250Â meV above the valence band maximum with a strong confinement at the center of the surface Brillouin zone. The lifetime of transiently excited carriers at the intergap surface states has been found to be â¼11Â ps, associated with rapid carrier diffusion.
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Physical and Theoretical Chemistry
Authors
Martin MÃ¥nsson, Michael A. Grishin, Oscar Tjernberg, Tomas Claesson, Henrik S. Karlsson, Ulf O. Karlsson,