Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366302 | Applied Surface Science | 2006 | 5 Pages |
Abstract
We investigated the initial Ge nucleation and Ge island growth on a Si(1 1 3) surface using low energy electron microscopy and low energy electron diffraction. The sample temperature was varied systematically between 380 °C and 590 °C. In this range, a strong temperature dependence of the island shape is observed. With increasing temperature the Ge islands are elongated in the [332¯] direction. Simultaneously, the average island size increases while their density decreases. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced.
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Authors
T. Clausen, Th. Schmidt, J.I. Flege, A. Locatelli, T.O. Mentes, S. Heun, F.Z. Guo, J. Falta,