Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366318 | Applied Surface Science | 2006 | 4 Pages |
Abstract
In this paper we report on the electrical and optical properties of amorphous carbon (a-C) and hydrogenated amorphous carbon (a-C:H) films. Resistivity of both types of films decreases with increase in temperature. At lower temperatures (60-250Â K) the electron transport is due to variable range hopping for the a-C films. At higher temperatures (300-430Â K) it is thermally activated for both types of films. Analysis of the heterojunction between diamond-like carbon (DLC) and bulk silicon (Si) leads to the conclusion that our a-C films are of n-type and our a-C:H films are of p-type. The optical measurements with DLC revealed a Tauc bandgap of 0.6Â eV for the a-C films and 1-1.2Â eV for the a-C:H films. An Urbach energy around 170Â meV could be determined for the a-C:H films. Strain versus resistance plots were measured resulting in piezoresistive gauge factors around 50 for the a-C films and in between 100 and 1200 for the a-C:H films.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Tibrewala, E. Peiner, R. Bandorf, S. Biehl, H. Lüthje,