| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5366332 | Applied Surface Science | 2006 | 4 Pages |
Abstract
Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested. It is shown that the noise measure of the short channel MESFET can be decreased within certain high frequency range.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
V.M. Aroutiounian, G.A. Avetisyan, V.V. Buniatyan, P.G. Soukiassian, Vaz.V. Buniatyan,