Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366370 | Applied Surface Science | 2006 | 5 Pages |
Abstract
Recently, we have shown that hard X-ray photoemission spectroscopy using undulator X-rays at SPring-8 is quite feasible with both high resolution and high throughput. Here we report an application of hard X-ray photoemission spectroscopy to the characterization of electronic and chemical states of thin solid films, for which conventional PES is not applicable. As a typical example, we focus on the problem of the scatter in the reported band-gap values for InN. We show that oxygen incorporation into the InN film strongly modifies the valence and plays a crucial role in the band gap problem. The present results demonstrate the powerful applicability of high resolution photoemission spectroscopy with hard X-rays from a synchrotron source.
Related Topics
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Physical and Theoretical Chemistry
Authors
J.J. Kim, E. Ikenaga, M. Kobata, A. Takeuchi, M. Awaji, H. Makino, P.P. Chen, A. Yamamoto, T. Matsuoka, D. Miwa, Y. Nishino, T. Yamamoto, T. Yao, K. Kobayashi,