Conductivity modification of ZnO film by low energy Fe10+ ion implantation

► The structural, optical and electrical behaviours have been studied for 300 keV Fe10+ ion implanted ZnO films with fluence in the range 3 × 1015-1 × 1017. ► Implanted ZnO film (at ≤200 K) shows p-type behaviour. ► Its magnetoresistance is positive in the temperature range 200-300 K, but it becomes negative below 200 K. ► In visible-infrared region the transmittance of the unimplanted sample is ∼90%, whereas that for implanted samples is in the range 82-89%. ► The photoluminescence spectrum are significantly intense for the implanted samples with fluence 1 × 1017 and 1 × 1016/cm3.