| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5366500 | Applied Surface Science | 2012 | 8 Pages |
A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19Â keV Ga+ bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for Pâ emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.
⺠Newly developed data acquisition and control system for TOF-SIMS VG Ionex IX23LS. ⺠Neutral Cs deposition onto surface of III-V semiconductors prior to SIMS analysis. ⺠Surface cesiation enhances the peak intensity of all negative ion species. ⺠An enhancement is larger for In-based than for Ga-based compounds. ⺠The greater bond ionicity of In-based compound is responsible for such an enhancement.
