Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366589 | Applied Surface Science | 2009 | 4 Pages |
Abstract
A self-consistent theory for calculation of built-in voltage (Ubi) of metal-organic semiconductor-metal (MOSM) structures is developed based on Gaussian energy distribution of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO). It is shown that the built-in voltage depends not only on the work function difference of the two electrodes, but also on the mean energy level of HOMO and LUMO, as well as the Gaussian width of the energy distribution. The theory predicts that the spreading of HOMO and LUMO levels will results in an increase of Ubi, and that Ubi decreases with increasing temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Ying-quan Peng, Wei-min Meng, Run-sheng Wang, Chao-zhu Ma, Xun-shuan Li, Hong-wei Xie, Rong-hua Li, Ming Zhao, Jian-ting Yuan, Ying Wang,