Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366626 | Applied Surface Science | 2006 | 4 Pages |
Abstract
Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of â¼5 J/cm2. The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Y.H. Tang, T.-K. Sham, D. Yang, L. Xue,